A 23-watt single-frequency vertical-externalcavity surface-emitting laser Fan Zhang,1,* Bernd Heinen,1 Matthias Wichmann,1 Christoph Möller,1 Bernardette Kunert,2 Arash Rahimi-Iman,1 Wolfgang Stolz,1,2 and Martin Koch1 1
Department of Physics and Materials Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany 2 NAsP III/V GmbH, Am Knechtacker 19, 35041 Marburg, Germany * [email protected]
Abstract: We report on a single-frequency semiconductor disk laser which generates 23.6 W output power in continuous wave operation, at a wavelength of 1013 nm. The high output power is a result of optimizing the chip design, thermal management and the cavity configuration. By applying passive stabilization techniques, the free-running linewidth is measured to be 407 kHz for a sampling time of 1 ms, while undercutting 100 kHz in the microsecond domain. ©2014 Optical Society of America OCIS codes: (140.3570) Lasers, single-mode; (140.5960) Semiconductor lasers; (140.7270) Vertical emitting lasers.
References and links 1. 2. 3. 4. 5. 6. 7.
8. 9. 10. 11. 12. 13.
B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012). T. Leinonen, S. Ranta, M. Tavast, R. Epstein, G. Fetzer, N. Sandalphon, N. Van Lieu, and M. Guina, “High power (23W) vertical external cavity surface emitting laser emitting at 1180 nm,” Proc. SPIE 8606, 860604 (2013). A. Laurain, C. Mart, J. Hader, J. V. Moloney, B. Kunert, and W. Stolz, “Optical noise of stabilized high-power single frequency optically pumped semiconductor laser,” Opt. Lett. 39(6), 1573–1576 (2014). A. Laurain, C. Mart, J. Hader, J. V. Moloney, B. Kunert, and W. Stolz, “15 W single frequency optically pumped semiconductor laser with sub-megahertz linewidth,” IEEE Photon. Technol. Lett. 26(2), 131–133 (2014). A. Rantamaki, A. Chamorovskiy, J. Lyytikainen, and O. Okhotnikov, “4.6-W single frequency semiconductor disk laser with
Department of Physics and Materials Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany 2 NAsP III/V GmbH, Am Knechtacker 19, 35041 Marburg, Germany * [email protected]
Abstract: We report on a single-frequency semiconductor disk laser which generates 23.6 W output power in continuous wave operation, at a wavelength of 1013 nm. The high output power is a result of optimizing the chip design, thermal management and the cavity configuration. By applying passive stabilization techniques, the free-running linewidth is measured to be 407 kHz for a sampling time of 1 ms, while undercutting 100 kHz in the microsecond domain. ©2014 Optical Society of America OCIS codes: (140.3570) Lasers, single-mode; (140.5960) Semiconductor lasers; (140.7270) Vertical emitting lasers.
References and links 1. 2. 3. 4. 5. 6. 7.
8. 9. 10. 11. 12. 13.
B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett. 48(9), 516–517 (2012). T. Leinonen, S. Ranta, M. Tavast, R. Epstein, G. Fetzer, N. Sandalphon, N. Van Lieu, and M. Guina, “High power (23W) vertical external cavity surface emitting laser emitting at 1180 nm,” Proc. SPIE 8606, 860604 (2013). A. Laurain, C. Mart, J. Hader, J. V. Moloney, B. Kunert, and W. Stolz, “Optical noise of stabilized high-power single frequency optically pumped semiconductor laser,” Opt. Lett. 39(6), 1573–1576 (2014). A. Laurain, C. Mart, J. Hader, J. V. Moloney, B. Kunert, and W. Stolz, “15 W single frequency optically pumped semiconductor laser with sub-megahertz linewidth,” IEEE Photon. Technol. Lett. 26(2), 131–133 (2014). A. Rantamaki, A. Chamorovskiy, J. Lyytikainen, and O. Okhotnikov, “4.6-W single frequency semiconductor disk laser with
