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Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors Seung Min Song, Jae Hoon Bong, Wan Sik Hwang & Byung Jin Cho Scientific Reports 6:25392; doi: 10.1038/srep25392; published online 04 May 2016; updated 27 June 2016 This Article contains errors in the Acknowledgements section. “This work was supported by research grants from the National Research Foundation (NRF) of Korea (20100029132 and 2011-0031638).” should read: “This work was supported by the Center for Advanced Soft-Electronics funded by the Ministry of Science, ICT and Future Planning as Global Frontier Project (CASE-2011-0031638).” This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

Scientific Reports | 6:28412 | DOI: 10.1038/srep28412

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Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors.

Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors. - PDF Download Free
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