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OPEN
received: 30 October 2015 accepted: 15 March 2016 Published: 07 April 2016
Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions Yi-Jen Huang1, Shih-Chun Chao2, Der-Hsien Lien1, Cheng-Yen Wen2,4, Jr-Hau He3 & Si-Chen Lee1 The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (
OPEN
received: 30 October 2015 accepted: 15 March 2016 Published: 07 April 2016
Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions Yi-Jen Huang1, Shih-Chun Chao2, Der-Hsien Lien1, Cheng-Yen Wen2,4, Jr-Hau He3 & Si-Chen Lee1 The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (
