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Erratum: Phase transitions via selective elemental vacancy engineering in complex oxide thin films Sang A. Lee, Hoidong Jeong, Sungmin Woo, Jae-Yeol Hwang, Si-Young Choi, Sung-Dae Kim, Minseok Choi, Seulki Roh, Hosung Yu, Jungseek Hwang, Sung Wng Kim & Woo Seok Choi Scientific Reports 6:23649; doi: 10.1038/srep23649; published online 01 April 2016; updated 22 April 2016 In this Article, Hosung Yu is incorrectly listed as being affiliated with ‘Department of Physics, Inha University, Incheon 22212, Korea’. In addition, Sung Wng Kim is incorrectly listed as being affiliated with ‘Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) Sungkyunkwan University, Suwon 16419, Korea’ and ‘Department of Physics, Inha University, Incheon 22212, Korea’. The correct affiliations are listed below: Hosung Yu and Sung Wng Kim Department of Energy Sciences, Sungkyunkwan University, Suwon 16419, Korea. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

Scientific Reports | 6:24695 | DOI: 10.1038/srep24695

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Erratum: Phase transitions via selective elemental vacancy engineering in complex oxide thin films.

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