Data in Brief 15 (2017) 81–85
Contents lists available at ScienceDirect
Data in Brief journal homepage: www.elsevier.com/locate/dib
Data Article
Integrated spectral photocurrent density and reproducibility analyses of excitonic ZnO/NiO heterojunction Malkeshkumar Patel a,b, Joondong Kim a,b,⁎ a Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon 406772, Republic of Korea b Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, 119 Academy Rd. Yeonsu, Incheon 406772, Republic of Korea
a r t i c l e i n f o
abstract
Article history: Received 19 June 2017 Received in revised form 29 August 2017 Accepted 8 September 2017 Available online 12 September 2017
In this data article, the excitonic ZnO/NiO heterojunction device (Patel et al., 2017) [1] was measured for the integrated photocurrent density and reproducibility. Photograph of the prepared devices of ZnO/NiO on the FTO/glass is presented. Integrated photocurrent density as a function of photon energy from the sunlight is presented. Quantum efficiency measurement system (McScienceK3100, Korea) compliance with International Measurement System was employed to measure ZnO/NIO devices. These data are shown for the 300–440 nm of segment of the sunlight (AM1.5G, http://rredc.nrel. gov/solar/spectra/am1.5/). Reproducibility measure of ZnO/NiO device was presented for nine devices with the estimated device performance parameters including the open circuit voltage, short circuit current density, fill factor and power conversion efficiency. & 2017 The Authers. Published by Elsevier Inc. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
Keywords: Metal oxides ZnO/NiO transparent Solar cells Stability Phase structure
⁎ Corresponding author at: Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, 119 Academy Rd. Yeonsu, Incheon 406772, Republic of Korea. E-mail address: [email protected] (J. Kim).
http://dx.doi.org/10.1016/j.dib.2017.09.007 2352-3409/& 2017 The Authers. Published by Elsevier Inc. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
82
M. Patel, J. Kim / Data in Brief 15 (2017) 81–85
Specifications Table Subject area More specific subject area Type of data How data was acquired Data format Experimental factors
Experimental features Data source location Data accessibility
Physics, Electrical Engineering Solar cells Figures, Table Quantum efficiency measurement system (McScienceK3100, Korea) Potentiostat/Galvanostat (ZIVE SP1, WonA Tech, Korea) Analyzed J-V: Linear sweep voltammetry, positive direction, scan range 0–0.8 V, compliance auto, scan resolution 5 mV. Spectral photoresponse: reference cell-Si photodiode, scan range 300–450 nm, room temperature. Excitonic metal oxide heterojunction (NiO/ZnO) solar cells Incheon National University, Incheon-406772, Korea The data are with this article
Value of the data
Photograph of the prepared ZnO/NiO devices for the transparent feature and reproducibility of the fabrication.
Integrated photocurrent density of ZnO/NiO device for UV light would be useful to design UV operational transparent solar cells.
Reproducibility and statistical information of the excitonic ZnO/NiO/Ag devices would be useful to demonstrate consistency.
1. Data Fig. 1 shows the devices of ZnO/NiO prepared on the FTO/glass substrate to study the reproducibility and stability. Integrated photocurrent density as a function of photon energy from the sunlight
Fig. 1. Prepared devices to study the reproducibility of ZnO/NiO structure on the FTO/glass substrate.
M. Patel, J. Kim / Data in Brief 15 (2017) 81–85
b
3
1.5
0.5 1
0
3.1
3.3
3.5 3.7 Eg/ hv (eV)
0
3.9
0.02
1
0.01
0.5
0 300
350 hv (eV)
400
Irradiance, AM1.5 (W m-2 nm-1)
2
Photocurrent density (mA cm-2)
1 Irradiance, AM1.5 (W m-2 eV-1)
Integrated photocurrent density (mA cm-2)
a
83
0
Fig. 2. (a) Integrated photocurrent density as a function of photon energy from the sunlight and irradiance spectral distribution. Spectral distribution of AM1.5G (http://rredc.nrel.gov/solar/spectra/am1.5/) was processed for photocurrent density. Each photon absorption generate one electron/hole pair was considered. (b) Photocurrent density of ZnO/NiO device estimated using the quantum efficiency data as shown in Fig. 3b in our manuscript.
Current demsity (mA/cm2)
0
D1 D2 D3 D4 D5 D6 D7 D8 D9
-1
-2
-0.1
-3
0.1
0.3 Voltage (V)
0.5
0.7
Fig. 3. Reproducibility measure of excitonic ZnO/NiO/Ag device, J–V characteristics under the UV light (365 nm, 8 mW/cm2). Inset shows the photograph of the prepared sample.
and irradiance spectral distribution AM1.5G (available online in Ref. [2]) was processed for photocurrent density and are shown in Fig. 2 after considering that each photon absorption in ZnO layer generates one electron/hole pair. Reproducibility measure of ZnO/NiO device was performed for the Ag paste applied total nine devices. These devices were measured for J-V characteristics as presented in Fig. 3. Estimated power conversion parameters such as open circuit voltage, short circuit current density, fill factor and power conversion efficiency of these devices are summarized in Table 1.
84
M. Patel, J. Kim / Data in Brief 15 (2017) 81–85
Table 1 Estimated solar cell performances. The native J–V spectra are shown in the Fig. 3. VOC, JSC, FF and Efficiency are summarized. Device
VOC (V)
JSC (mA/cm2)
FF (%)
Effi (%)
D1 D2 D3 D4 D5 D6 D7 D8 D9 Average
0.526 0.526 0.526 0.516 0.526 0.466 0.516 0.526 0.526 0.516
2.337 0.058 2.197 0.054 2.577 0.64 1.707 0.042 1.977 0.042 2.09 7 0.052 2.077 0.051 1.856 7 0.046 2.00 70.050 1.971
32.76 32.33 32.29 33.17 32.98 31.71 28.91 33.69 33.22 32.30
5.02 4.65 5.46 3.64 4.29 3.86 3.86 4.11 4.37 4.10
2. Experimental design, materials and methods 2.1. Sample preparation Glass and commercial FTO glass were used as substrates and was cleaned according to Ref. [1]. ZnO film was formed using the RF magnetron sputtering. Conditions for preparing ZnO sample is as follows. Target RF power Gas/flow rate Deposition pressure Temperature Substrate rotation Deposition time
ZnO (Ø4 inch, purity 99.999%) 300 W Ag/50 sccm 5 mTorr Room temperature 5 rpm 30 minutes
NiO film was formed using the DC reactive sputtering. Conditions for preparing NiO sample are as follows. Target DC power Gas/flow rate Deposition pressure Temperature Substrate rotation Deposition time
Ni (Ø4 inch, purity 99.999%) 50 W Ag/50 sccm, O2/4 sccm 3 mTorr Room temperature 5 rpm 15 minutes
For the transparent solar cell, FTO-coated glass was used. The deposition condition of UV-reactive layers (ZnO and NiO) was same as above. Ag paste was applied above the NiO layer as conducting electrode. 2.2. Sample characterizations Integrated photocurrent density as a function of photon energy (hv) from the Sunlight as irradiance spectral distribution applied. AM 1.5G data were applied for this calculation and available on Ref. [2]. For this calculation, we considered that each-photon absorption in ZnO/NiO device generates one electron/hole pair and this data are shown in Fig. 2. The measured quantum efficiency of ZnO/NiO/Ag paste was applied to estimate the photocurrent density from the sunlight. The normalized quantum efficiency data are presented in the Fig. 3b of the Ref. [1]. This measurement was
M. Patel, J. Kim / Data in Brief 15 (2017) 81–85
85
performed using a quantum efficiency measurement system (McScienceK3100, Korea) after the calibrating using reference Si photodiode in the scan range 300 nm to 450 nm at room temperature. J–V characteristics of ZnO/NiO/Ag devices are presented in Fig. 3. These data were measured for UV illumination. Illuminated J–V spectra were applied to estimate the solar cell performance parameters such as open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF), and power conversion efficiency which are summarized in Table 1.
Acknowledgements The authors acknowledge the financial support of the Korea Institute of Energy Technology Evaluation and Planning by the Ministry of Knowledge Economy (KETEP-0133030011000), Basic Science Research Program through the National Research Foundation (NRF) of Korea by the Ministry of Education (NRF-2015R1D1A1A01059165), Korea Research Fellowship Program through the NRF by the Ministry of Science, ICT and Future Planning (NRF-2015H1D3A1066311) and the Korea Institute of Industrial Technology as Convergence research (KITECH EO-17-0018).
Transparency document. Supplementary material Transparency document associated with this article can be found in the online version at http://dx. doi.org/10.1016/j.dib.2017.09.007.
References [1] Malkeshkumar Patel, Hong-Sik Kim, Joondong Kim, Ju-Hyung Yun, Sung Jin Kim, Eun Ha Choi, Hyeong-Ho Park, Excitonic metal oxide heterojunction (NiO/ZnO) solar cells for all transparent module integration, Sol. Energy Mater. Sol. Cells 170 (2017) 246–253. [2] Online: 〈http://rredc.nrel.gov/solar/spectra/am1.5/〉.
Contents lists available at ScienceDirect
Data in Brief journal homepage: www.elsevier.com/locate/dib
Data Article
Integrated spectral photocurrent density and reproducibility analyses of excitonic ZnO/NiO heterojunction Malkeshkumar Patel a,b, Joondong Kim a,b,⁎ a Department of Electrical Engineering, Incheon National University, 119 Academy Rd. Yeonsu, Incheon 406772, Republic of Korea b Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, 119 Academy Rd. Yeonsu, Incheon 406772, Republic of Korea
a r t i c l e i n f o
abstract
Article history: Received 19 June 2017 Received in revised form 29 August 2017 Accepted 8 September 2017 Available online 12 September 2017
In this data article, the excitonic ZnO/NiO heterojunction device (Patel et al., 2017) [1] was measured for the integrated photocurrent density and reproducibility. Photograph of the prepared devices of ZnO/NiO on the FTO/glass is presented. Integrated photocurrent density as a function of photon energy from the sunlight is presented. Quantum efficiency measurement system (McScienceK3100, Korea) compliance with International Measurement System was employed to measure ZnO/NIO devices. These data are shown for the 300–440 nm of segment of the sunlight (AM1.5G, http://rredc.nrel. gov/solar/spectra/am1.5/). Reproducibility measure of ZnO/NiO device was presented for nine devices with the estimated device performance parameters including the open circuit voltage, short circuit current density, fill factor and power conversion efficiency. & 2017 The Authers. Published by Elsevier Inc. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
Keywords: Metal oxides ZnO/NiO transparent Solar cells Stability Phase structure
⁎ Corresponding author at: Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, 119 Academy Rd. Yeonsu, Incheon 406772, Republic of Korea. E-mail address: [email protected] (J. Kim).
http://dx.doi.org/10.1016/j.dib.2017.09.007 2352-3409/& 2017 The Authers. Published by Elsevier Inc. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
82
M. Patel, J. Kim / Data in Brief 15 (2017) 81–85
Specifications Table Subject area More specific subject area Type of data How data was acquired Data format Experimental factors
Experimental features Data source location Data accessibility
Physics, Electrical Engineering Solar cells Figures, Table Quantum efficiency measurement system (McScienceK3100, Korea) Potentiostat/Galvanostat (ZIVE SP1, WonA Tech, Korea) Analyzed J-V: Linear sweep voltammetry, positive direction, scan range 0–0.8 V, compliance auto, scan resolution 5 mV. Spectral photoresponse: reference cell-Si photodiode, scan range 300–450 nm, room temperature. Excitonic metal oxide heterojunction (NiO/ZnO) solar cells Incheon National University, Incheon-406772, Korea The data are with this article
Value of the data
Photograph of the prepared ZnO/NiO devices for the transparent feature and reproducibility of the fabrication.
Integrated photocurrent density of ZnO/NiO device for UV light would be useful to design UV operational transparent solar cells.
Reproducibility and statistical information of the excitonic ZnO/NiO/Ag devices would be useful to demonstrate consistency.
1. Data Fig. 1 shows the devices of ZnO/NiO prepared on the FTO/glass substrate to study the reproducibility and stability. Integrated photocurrent density as a function of photon energy from the sunlight
Fig. 1. Prepared devices to study the reproducibility of ZnO/NiO structure on the FTO/glass substrate.
M. Patel, J. Kim / Data in Brief 15 (2017) 81–85
b
3
1.5
0.5 1
0
3.1
3.3
3.5 3.7 Eg/ hv (eV)
0
3.9
0.02
1
0.01
0.5
0 300
350 hv (eV)
400
Irradiance, AM1.5 (W m-2 nm-1)
2
Photocurrent density (mA cm-2)
1 Irradiance, AM1.5 (W m-2 eV-1)
Integrated photocurrent density (mA cm-2)
a
83
0
Fig. 2. (a) Integrated photocurrent density as a function of photon energy from the sunlight and irradiance spectral distribution. Spectral distribution of AM1.5G (http://rredc.nrel.gov/solar/spectra/am1.5/) was processed for photocurrent density. Each photon absorption generate one electron/hole pair was considered. (b) Photocurrent density of ZnO/NiO device estimated using the quantum efficiency data as shown in Fig. 3b in our manuscript.
Current demsity (mA/cm2)
0
D1 D2 D3 D4 D5 D6 D7 D8 D9
-1
-2
-0.1
-3
0.1
0.3 Voltage (V)
0.5
0.7
Fig. 3. Reproducibility measure of excitonic ZnO/NiO/Ag device, J–V characteristics under the UV light (365 nm, 8 mW/cm2). Inset shows the photograph of the prepared sample.
and irradiance spectral distribution AM1.5G (available online in Ref. [2]) was processed for photocurrent density and are shown in Fig. 2 after considering that each photon absorption in ZnO layer generates one electron/hole pair. Reproducibility measure of ZnO/NiO device was performed for the Ag paste applied total nine devices. These devices were measured for J-V characteristics as presented in Fig. 3. Estimated power conversion parameters such as open circuit voltage, short circuit current density, fill factor and power conversion efficiency of these devices are summarized in Table 1.
84
M. Patel, J. Kim / Data in Brief 15 (2017) 81–85
Table 1 Estimated solar cell performances. The native J–V spectra are shown in the Fig. 3. VOC, JSC, FF and Efficiency are summarized. Device
VOC (V)
JSC (mA/cm2)
FF (%)
Effi (%)
D1 D2 D3 D4 D5 D6 D7 D8 D9 Average
0.526 0.526 0.526 0.516 0.526 0.466 0.516 0.526 0.526 0.516
2.337 0.058 2.197 0.054 2.577 0.64 1.707 0.042 1.977 0.042 2.09 7 0.052 2.077 0.051 1.856 7 0.046 2.00 70.050 1.971
32.76 32.33 32.29 33.17 32.98 31.71 28.91 33.69 33.22 32.30
5.02 4.65 5.46 3.64 4.29 3.86 3.86 4.11 4.37 4.10
2. Experimental design, materials and methods 2.1. Sample preparation Glass and commercial FTO glass were used as substrates and was cleaned according to Ref. [1]. ZnO film was formed using the RF magnetron sputtering. Conditions for preparing ZnO sample is as follows. Target RF power Gas/flow rate Deposition pressure Temperature Substrate rotation Deposition time
ZnO (Ø4 inch, purity 99.999%) 300 W Ag/50 sccm 5 mTorr Room temperature 5 rpm 30 minutes
NiO film was formed using the DC reactive sputtering. Conditions for preparing NiO sample are as follows. Target DC power Gas/flow rate Deposition pressure Temperature Substrate rotation Deposition time
Ni (Ø4 inch, purity 99.999%) 50 W Ag/50 sccm, O2/4 sccm 3 mTorr Room temperature 5 rpm 15 minutes
For the transparent solar cell, FTO-coated glass was used. The deposition condition of UV-reactive layers (ZnO and NiO) was same as above. Ag paste was applied above the NiO layer as conducting electrode. 2.2. Sample characterizations Integrated photocurrent density as a function of photon energy (hv) from the Sunlight as irradiance spectral distribution applied. AM 1.5G data were applied for this calculation and available on Ref. [2]. For this calculation, we considered that each-photon absorption in ZnO/NiO device generates one electron/hole pair and this data are shown in Fig. 2. The measured quantum efficiency of ZnO/NiO/Ag paste was applied to estimate the photocurrent density from the sunlight. The normalized quantum efficiency data are presented in the Fig. 3b of the Ref. [1]. This measurement was
M. Patel, J. Kim / Data in Brief 15 (2017) 81–85
85
performed using a quantum efficiency measurement system (McScienceK3100, Korea) after the calibrating using reference Si photodiode in the scan range 300 nm to 450 nm at room temperature. J–V characteristics of ZnO/NiO/Ag devices are presented in Fig. 3. These data were measured for UV illumination. Illuminated J–V spectra were applied to estimate the solar cell performance parameters such as open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF), and power conversion efficiency which are summarized in Table 1.
Acknowledgements The authors acknowledge the financial support of the Korea Institute of Energy Technology Evaluation and Planning by the Ministry of Knowledge Economy (KETEP-0133030011000), Basic Science Research Program through the National Research Foundation (NRF) of Korea by the Ministry of Education (NRF-2015R1D1A1A01059165), Korea Research Fellowship Program through the NRF by the Ministry of Science, ICT and Future Planning (NRF-2015H1D3A1066311) and the Korea Institute of Industrial Technology as Convergence research (KITECH EO-17-0018).
Transparency document. Supplementary material Transparency document associated with this article can be found in the online version at http://dx. doi.org/10.1016/j.dib.2017.09.007.
References [1] Malkeshkumar Patel, Hong-Sik Kim, Joondong Kim, Ju-Hyung Yun, Sung Jin Kim, Eun Ha Choi, Hyeong-Ho Park, Excitonic metal oxide heterojunction (NiO/ZnO) solar cells for all transparent module integration, Sol. Energy Mater. Sol. Cells 170 (2017) 246–253. [2] Online: 〈http://rredc.nrel.gov/solar/spectra/am1.5/〉.
